Sources of n-type conductivity in ZnO

نویسندگان

  • M. D. McCluskey
  • S. J. Jokela
چکیده

Zinc oxide (ZnO) is a strong candidate for energy-efficient white lighting and numerous optoelectronic applications. Hydrogen impurities play important roles, good and bad, in the pursuit of reliable p-type doping of ZnO. In pervious work, we identified hydrogen donors with the back-bonded or ‘‘anti-bonding’’ orientation, with an angle of 1111 to the c-axis. It is possible, however, that these hydrogen donors are complexed with another defect. Impurities besides hydrogen are also donors in as-grown ZnO. Results from secondary ion mass spectroscopy (SIMS) show significant concentrations of Al in samples of bulk single-crystal ZnO obtained from Cermet, Inc., Ga and B in samples from Eagle-Picher, and Si in both. r 2007 Elsevier B.V. All rights reserved.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

The origin of p-type conduction in (P, N) co-doped ZnO

P mono-doped and (P, N) co-doped ZnO are investigated by the first-principles calculations. It is found that substitutive P defect forms a deep acceptor level at O site (PO) and it behaves as a donor at Zn site (PZn), while interstitial P (Pi) is amphoteric. Under equilibrium conditions, these defects contribute little to the p-type conductivity of ZnO samples since the formation energy of PZn ...

متن کامل

Fundamentals of zinc oxide as a semiconductor

In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical con...

متن کامل

Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1...

متن کامل

Ammonia plasma modification towards a rapid and low temperature approach for tuning electrical conductivity of ZnO nanowires on flexible substrates.

Though the fabrication of ZnO nanostructures is economical and low temperature, the lack of a facile, reliable and low temperature methodology to tune its electrical conductivity has prevented it from competing with other semiconductors. Here, we carried out surface modification of ZnO nanowires using ammonia plasma with no heat treatment, and studied their electrical properties over an extende...

متن کامل

Defect analysis and engineering in ZnO

Zinc oxide has numerous applications in electronic and optoelectronic devices. Progress is currently hampered by a lack of control over electrical conductivity: ZnO is typically n-type conductive, the cause of which has been widely debated. A first-principles investigation, based on density functional theory, shows that native defects are unlikely to be the cause of the unintentional n-type con...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2007